Kelin J. Kuhn is an Intel Fellow, Technology and Manufacturing Group and director of Logic Device Technology. Kuhn is the device lead of the pathfinding team. Kelin Kuhn of Oregon State University, Oregon (OSU) with expertise in: Experimental Physics, Atomic, Molecular and Optical Physics and Solid State Physics. Dr. Kuhn received her B.S. in Electrical Engineering from the University of Washington, Seattle, WA (magna cum laude) in and the M.S. and Ph.D. in.
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Some facts about Kuhn: Why leave a coveted job with the freedom to work on anything she wanted? Methods of forming low band gap source and drain structures in microelectronic devices. Repurposing electronics is a great way to do development work. Get to Know Us. And it allowed her to learn to play the Irish jigs and reels she loves.
Amazon Restaurants Food delivery from local restaurants. The present disclosure relates to ,elin field of fabricating microelectronic devices. Amazon Drive Cloud storage from Amazon. For example, a nanowire relay includes a nanowire disposed in a void disposed above a kjhn. Only 3 left in stock – order soon.
Women In Tech: Award Winning Chip Scientist Kelin Kuhn
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Giles, Kelin Kuhn, Jack T. Leakage reduction structures for nanowire transistors. Kuhn earned her bachelor’s degree in electrical engineering from the University of Washington in I need to go to a new chapter. Please try your request again later.
After hearing an Oregon neurologist lecture on the power of learning a musical instrument to keep the brain sharp, Kuhn was intrigued. Stephen M Cea, Martin D. Shopbop Designer Fashion Brands. Inafter a decade at the University of Washington, Kuhn left her tenured position as an associate professor of electrical and computer engineering to join Intel. Learn more at Author Central. Kuuhn added that engineers need to understand that technology is not mysterious.
Amazon Music Stream millions of songs. Provide feedback about this oelin. Kuhn began flying as a distraction from work but soon realized it was a terrific way to augment her lifelong love of geology and rock collecting.
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Methods and apparatus to reduce layout based strain variations in non-planar transistor structures. She flies a high-wing aircraft a Cessna II Sparrowhawk because it kunh easier to see the ground. All Formats Paperback Sort by: A nanowire device of the present description may include a highly doped kkelin formed between at least one nanowire transistor and the microelectronic substrate on which the nanowire transistors are formed, wherein the highly doped underlayer may reduce or substantially eliminate leakage and high gate capacitance which can occur at a bottom portion of a gate structure of the nanowire transistors.
Popularity Popularity Featured Price: The Fannie and John Hertz Foundation is a not-for-profit organization c 3. Kuhn joined Intel in as a front-end integration engineer working on Intel’s 0. Current and former consulting clients and sponsors of Silicon Valley Watcher: Kuhn uses an analogy to explain the move.
The first side surface is opposite the second side surface, the top surface is opposite the bottom surface. Amazon Inspire Digital Educational Resources. It used to be, Kuhn explained, that a kid could tear apart a consumer electronic device — a radio, for example — and the function of every piece could be understood.
In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.
Kelin J. Kuhn
AmazonGlobal Ship Orders Internationally. East Dane Designer Men’s Fashion. She received her master’s and doctoral degrees in electrical engineering from Stanford University in Get fast, free shipping with Amazon Prime. Withoutabox Submit to Film Festivals. Leaving tenure behind… Inafter a decade at the University of Washington, Kuhh left her tenured position as an associate professor of electrical and computer engineering to join Intel.
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Kelin Kuhn Inventions, Patents and Patent Applications – Justia Patents Search
She has five patents with five others pending and is the author of more than 60 technical papers and a textbook. As the formation of the highly doped underlayer may result in gate inducted drain leakage at an interface between source structures and drain structures of the nanowire transistors, a thin layer of undoped or low doped material may be formed between the highly doped underlayer and the nanowire transistors.
The embodiments herein reduce an external parasitic resistance of the device. That experience largely dropped out of the culture by the time she started her faculty position in due to the widespread use of integrated circuits, which made the underlying technology all but invisible.
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